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| Datasheet File OCR Text: |
| PROCESS CP273 Power Transistor NPN- Silicon Power Transistor Chip Central TM Semiconductor Corp. PROCESS DETAILS Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization 68 x 68 MILS 8.5 MILS 0.6 MILS 17.7 x 10.2 MILS 18.1 x 8.9 MILS Al - 30,000A Ag - 14,000A GEOMETRY GROSS DIE PER 4 INCH WAFER 2,440 PRINCIPAL DEVICE TYPES MJE13003 BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (28 -March 2005) Central TM PROCESS CP273 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (28 -March 2005) |
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